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Gallium Oxide, Gallium Trioxide, 12024-21-4

Gallium Oxide, Gallium Trioxide, 12024-21-4

GALLIUM OXIDE (GA₂O₃)
GALLIUM OXIDE / GALLIUM TRIOXIDE / GALLIUM(III) OXIDE
1. PRODUCT IDENTIFICATION AND CHEMICAL IDENTITY

Parameter Information
Product Name Gallium Oxide
Chemical Name Gallium(III) Oxide, Gallium Trioxide
Other Names Ga₂O₃
CAS Number 12024-21-4
EC Number (EINECS) 234-953-2
Chemical Formula Ga₂O₃
Molecular Weight 187.44 g/mol
Appearance White crystalline powder
Odor Odorless
Physical State (20°C) Solid (powder)

2. CHEMICAL STRUCTURE
2.1. Molecular Structure
Gallium oxide is an inorganic compound of gallium and oxygen. Gallium ions (Ga³⁺) and oxide ions (O²⁻) are present in a 2:3 ratio. It is a wide bandgap semiconductor (~4.9 eV). It exists in several polymorphic forms (α, β, γ, δ, ε). It is known for its high thermal stability, optical transparency, and chemical inertness. It is insoluble in water but soluble in strong acids.

Structural Features:

                    GALLIUM OXIDE [Ga₂O₃]
                          |
                Ga³⁺ - O²⁻ Ionic Bonds
                          |
        +----------------+----------------+
        |                |                |
    Polymorphic        White Powder     Wide Bandgap
    Structure                           (~4.9 eV)

2.2. Structural Properties

Parameter Value
Crystal Structure Polymorphic (α, β, γ, δ, ε forms)
Chemical Formula Ga₂O₃
Molecular Weight 187.44 g/mol
Density ~6.44 g/cm³
Appearance White crystalline powder
Melting Point ~1,725 °C
Band Gap ~4.9 eV (β form)
Dielectric Constant ~10.2

3. PHYSICAL AND CHEMICAL PROPERTIES

Property Value Description
Appearance White crystalline powder Color shade depends on purity
Odor Odorless -
Chemical Formula Ga₂O₃ -
Molecular Weight 187.44 g/mol -
Density ~6.44 g/cm³ -
Melting Point ~1,725 °C -
Solubility in Water (25°C) Insoluble -
Solubility in Acids Soluble Forms gallium salts
Solubility in Alcohol Insoluble -
Crystal Structure Polymorphic -
Band Gap ~4.9 eV Wide bandgap semiconductor
Optical Transparency Transparent to UV light UV optoelectronic applications
Thermal Stability High -
Hygroscopicity Low -

4. PURITY GRADES

Parameter Technical Grade High Purity Grade Analytical Grade Ultra-High Purity Grade
Purity (Ga₂O₃) ≥ 99.0% ≥ 99.9% ≥ 99.99% ≥ 99.999%
Gallium (Ga) Content ≥ 73.0% ≥ 73.5% ≥ 73.7% ≥ 73.9%
Iron (Fe) ≤ 100 ppm ≤ 50 ppm ≤ 20 ppm ≤ 10 ppm
Calcium (Ca) ≤ 100 ppm ≤ 50 ppm ≤ 20 ppm ≤ 10 ppm
Silicon (Si) ≤ 100 ppm ≤ 50 ppm ≤ 20 ppm ≤ 10 ppm
Heavy Metals (Pb) ≤ 50 ppm ≤ 20 ppm ≤ 10 ppm ≤ 5 ppm
Chloride (Cl⁻) ≤ 0.1% ≤ 0.05% ≤ 0.02% ≤ 0.01%
Loss on Drying ≤ 1.0% ≤ 0.5% ≤ 0.3% ≤ 0.1%
Particle Size (D50) 5-20 µm 1-10 µm 0.5-5 µm 0.2-2 µm
BET Surface Area 5-15 m²/g 10-20 m²/g 15-30 m²/g 20-50 m²/g

5. STABILITY AND REACTIVITY

Parameter Information
Chemical Stability Stable in air; stable at high temperatures.
Conditions to Avoid Strong acids, high humidity (prolonged), reducing environments.
Incompatible Materials Strong acids, strong reducing agents, halogens.
Hazardous Decomposition Products Upon oxidation at high temperatures: gallium oxide (Ga₂O₃) is stable; with acids: gallium salts.
Hazardous Polymerization Will not occur.
Hygroscopicity Low.

5.1. Chemical Reactions

  • Reaction with Acids:
    Ga₂O₃ + 6HCl → 2GaCl₃ + 3H₂O
    Ga₂O₃ + 6HNO₃ → 2Ga(NO₃)₃ + 3H₂O
    Ga₂O₃ + 3H₂SO₄ → Ga₂(SO₄)₃ + 3H₂O

  • Reaction with Bases:
    Ga₂O₃ + 2NaOH + 3H₂O → 2Na[Ga(OH)₄] (amphoteric behavior)

  • Reduction (at High Temperature):
    Ga₂O₃ + 2H₂ → Ga₂O + 2H₂O
    Ga₂O₃ + 3C → 2Ga + 3CO

6. APPLICATION AREAS
6.1. Electronics and Power Electronics

Application Function Details
Power Transistors High voltage switching β-Ga₂O₃-based devices
Diodes Rectification High temperature and high voltage
Schottky Barrier Diodes Fast switching Power electronics applications
Semiconductor Material Wide bandgap semiconductor Alternative to SiC and GaN

6.2. Optics and Optoelectronics

Application Function Details
UV Optical Devices UV transparency Deep UV optics
Transparent Ceramics Optical material High temperature optics
Optoelectronic Devices Light emitting and detecting UV detectors, LEDs
Gas Sensors Detection High sensitivity sensors

6.3. Ceramics and Coatings

Application Function Details
High Performance Ceramics Additive Mechanical and thermal properties
Thermal Barrier Coatings Thermal insulation High temperature applications
Protective Coatings Oxidation resistance Metal surfaces

6.4. Catalyst Applications

Application Function Details
Organic Reactions Catalytic activity Oxidation and dehydrogenation
Petrochemical Catalyst Catalytic conversion Special catalytic processes

6.5. Research and Advanced Materials

Application Function Details
Thin Films and Nanostructures Advanced materials science Epitaxial growth
Materials Science Research Fundamental research New material development
Quantum Materials Research Physics research Topological materials

6.6. Sectoral Suitability Table

Sector Suitability Explanation
Electronics Suitable Power electronics, semiconductors
Optics/Optoelectronics Suitable UV optics, transparent ceramics
Ceramics Suitable High performance ceramics
Catalyst Suitable Organic reactions
Research Suitable Thin films, nanostructures, materials science
Food Not Suitable Not suitable
Cosmetics Not Suitable Not suitable

7. PRODUCTION PROCESS

Stage Process Description
1. Raw Material Preparation Gallium metal or gallium salts High purity gallium sources
2. Oxidation Thermal oxidation Heating gallium metal in air
3. Precipitation Chemical precipitation Precipitation of gallium salts
4. Calcination Thermal treatment Conversion to oxide form (600-1000°C)
5. Milling Mechanical processing Achieving desired particle size
6. Quality Control Analysis and testing ICP-OES, XRD, BET surface area

7.1. Major Producing Countries

Country Description
China Major producer
Japan High purity production
USA Gallium production
Germany Gallium refining

8. ALTERNATIVE / SUBSTITUTE PRODUCTS

Alternative Description When to Use
Gallium Nitrate For solution chemistry When liquid form of gallium is required
Gallium Chloride For solution chemistry When liquid form of gallium is required
Silicon Carbide (SiC) Power electronics When higher thermal conductivity is required
Gallium Nitride (GaN) Power electronics/optoelectronics When different bandgap is required
Aluminum Oxide (Al₂O₃) Ceramic applications Lower cost alternative

9. SAFETY AND TOXICOLOGY

Parameter Value
Acute Oral Toxicity (LD50, Rat) > 2,000 mg/kg (low toxicity)
Dermal Toxicity Low
Skin Irritation Mild irritant
Eye Irritation Mild to moderate irritant
Inhalation Fine dust inhalation may cause respiratory tract irritation.
Carcinogenicity Not classified as carcinogenic.
Mutagenicity Not mutagenic.
Chronic Effects Gallium compounds have low bioavailability; prolonged exposure may cause lung effects.
Environmental Hazards Low to moderate aquatic toxicity.

9.1. GHS Classification

Hazard Class Category H-Statement
Skin Irritation Category 2 H315: Causes skin irritation.
Eye Irritation Category 2A H319: Causes serious eye irritation.
Specific Target Organ Toxicity Category 3 H335: May cause respiratory irritation.

Signal Word: WARNING

Hazard Pictograms: GHS07 (Exclamation Mark)

10. PRECAUTIONARY STATEMENTS (P-CODES)

Code Statement
P261 Avoid breathing dust.
P264 Wash thoroughly after handling.
P271 Use only in well-ventilated areas.
P280 Wear protective gloves/eye protection/face protection.
P302+P352 IF ON SKIN: Wash with plenty of soap and water.
P304+P340 IF INHALED: Remove person to fresh air and keep comfortable for breathing.
P305+P351+P338 IF IN EYES: Rinse cautiously with water for several minutes. Remove contact lenses if present and easy to do.
P337+P313 If eye irritation persists: Get medical advice/attention.
P501 Dispose of contents/container in accordance with local regulations.

11. FIRST AID MEASURES

Exposure Route Action to Take
Inhalation Remove to fresh air. If symptoms persist, seek medical attention.
Skin Contact Wash with plenty of soap and water. Remove contaminated clothing. If irritation persists, seek medical attention.
Eye Contact Rinse thoroughly with plenty of water for at least 15 minutes. Remove contact lenses. If irritation persists, seek medical attention.
Ingestion Rinse mouth. Drink plenty of water. If large amount is swallowed, seek medical attention.

12. STORAGE AND SHELF LIFE

Parameter Condition
Storage Conditions Store in a cool, dry, and well-ventilated area. Ensure a moisture-free environment.
Container Requirements Moisture-proof, tightly closed containers.
Temperature Room temperature (15-25°C).
Shelf Life 24-36 months under appropriate conditions.
Stability Note Stable under normal conditions; should be stored in closed packaging to prevent moisture and CO₂ absorption.

13. PACKAGING OPTIONS

Packaging Type Quantity Material
Laboratory Packaging 5 g, 10 g, 25 g, 50 g, 100 g HDPE bottle, aluminum foil bag
Industrial Packaging 25 kg PE-lined kraft bag, moisture-proof
Drum 25 kg, 50 kg HDPE drum, moisture-proof
IBC (Intermediate Bulk Container) 500 kg, 1000 kg Moisture-proof, palletized

14. TRANSPORT INFORMATION

Parameter Information
UN Number Not classified (specific regulations apply for metal oxides)
Hazard Class -
Packing Group -
ADR/RID Not regulated (special precautions may be required for powder form)
IMDG Not regulated
IATA Not regulated
HS Code 2825.90.00.00.00 (Other metal oxides)

15. REGULATORY STATUS

Region / Authority Status
European Union (REACH) Registered
Turkey (KKDIK) Compliance required
TSCA (USA) Registered
EINECS 234-953-2
China Registered; major production and export country

16. OTHER NAMES AND SYNONYMS

Name Description
Gallium Trioxide Chemical name
Gallium(III) Oxide Chemical name
Ga₂O₃ Chemical abbreviation
β-Ga₂O₃ Beta form (most stable)
Gallium Oxide Powder Common name
Wide Bandgap Oxide Functional description

17. QUICK REFERENCE TABLE

Property Value
CAS Number 12024-21-4
EC Number 234-953-2
Chemical Formula Ga₂O₃
Molecular Weight 187.44 g/mol
Appearance White crystalline powder
Density ~6.44 g/cm³
Melting Point ~1,725 °C
Band Gap ~4.9 eV
HS Code 2825.90.00.00.00
GHS Signal Word WARNING

18. CRITICAL WARNINGS AND BEST PRACTICES

CRITICAL WARNINGS:

  • Wide Bandgap Semiconductor: β-Ga₂O₃ has a bandgap of ~4.9 eV, wider than SiC (3.3 eV) and GaN (3.4 eV). This provides advantages for high-voltage and high-temperature power electronics applications.

  • High Critical Electric Field: β-Ga₂O₃ has a higher critical electric field (~8 MV/cm) than SiC and GaN.

  • Optical Transparency: Its transparency to UV light makes it valuable for deep UV optoelectronic applications.

  • Amphoteric Behavior: Gallium oxide reacts with both acids and bases (amphoteric oxide).

  • High Purity Requirement: Electronic and optical applications require high purity (>99.9%).

  • Powder Hazard: Fine powder form may cause respiratory tract irritation. Dust control measures must be taken.

BEST PRACTICE RECOMMENDATIONS:

  • Storage:

    • Store in a cool, dry, and well-ventilated area.

    • Use moisture-proof, tightly closed containers.

    • Keep away from acids and oxidizing agents.

    • Store at room temperature (15-25°C).

  • Handling:

    • Use in well-ventilated areas with local exhaust ventilation.

    • Use a dust mask (N95 or better), protective goggles, and gloves.

    • Avoid dust formation and inhalation.

    • Wash hands thoroughly after handling.

    • For dissolution in acids, add oxide to acid slowly with cooling and stirring.

    • Use vacuum or inert atmosphere for epitaxial growth processes.

  • Waste Management:

    • Dispose of in accordance with local regulations.

    • Do not discharge into water sources.

    • For large quantities, gallium recovery should be considered (valuable metal).

LEGAL DISCLAIMER
This Technical Data Sheet (TDS) is for informational purposes only and has been prepared based on available technical data. The user is solely responsible for determining the suitability of the product for their specific applications and for complying with all local, national, and international regulations. For complete safety, storage, handling, transport, disposal, and regulatory compliance information, the official Safety Data Sheet (SDS/MSDS) provided by the manufacturer/supplier must be consulted. This document does not substitute professional advice. Gallium oxide is a critical material for next-generation power electronics and optoelectronic applications; careful handling and storage are required due to high purity requirements.

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